Noise parameters and models HEMT in microwave mixers

Conversion Loss and Noise of Microwave and Millimeterwave Mixers: Part 2--Experiment

The theory of noise and conversion loss in millimeterwave mixers, developed in a companion paper, is applied to an 80-120.-GHz mixer. Good agreement is obtained between theoretical and experimental results, and the source of the recently reported “anomalous noise” is explained. Experimental methods are described for measuring the embedding impedance and diode equivalent circuit, needed for the ...

Conversion Loss and Noise of Microwave and Millimeterwave Mixers: Part 1--Theory

An analysis is presented for the conversion loss and noise of microwave and millimeter-wave mixers. The analysis includes the effects of nonlinear capacitance, arbitrary embedding impedances, nonideality of microwave diodes, and shot, thermal, and scattering noise generated in the diode. Correlation of downconvertd components of the time-varying shot noise is shown to explain the “anomalous” no...

A Tutorial for RF & Microwave Mixers

Noise in Current-Commutating CMOS Mixers

A noise analysis of current-commutating CMOS mixers, such as the widely used CMOS Gilbert cell, is presented. The contribution of all internal and external noise sources to the output noise is calculated. As a result, the noise figure can be rapidly estimated by computing only a few parameters or by reading them from provided normalized graphs. Simple explicit formulas for the noise introduced ...

RF and Microwave Oscillator Design using p-HEMT Transistor

This paper presents a systematic approach to designing negative-resistance and Colpitts oscillators using p-HEMT transistor. Various models such as, common source and common gate configuration in negative-resistance oscillators, common source series feedback in Colpitts oscillator is selected to analyze the output power and stability presented by the p-HEMT transistor. These oscillators are des...